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■ General Session (Fundamentals & Growth Technologies)
G01
Fundamentals of Nucleation and Crystal Growth
Theory, modeling, and experiments designed to learn the fundamental aspects of nucleation and crystal growth. Thermodynamics of interfaces.
G02
Surfaces and Interfaces
Surface and interface science including the structure of solid-liquid interfaces, surface defects, and surfactants. Stress evolution during growth. Morphological stability.
G03
Nanomaterials and Low Dimensional Structures
Synthesis of nanoparticles, quantum dots, nanowires, nanotubes, and other low dimensional structures. Materials for additive manufacturing.
Precise fabrication of nanometer-scale structures by lithography, self-assembly, chemical synthesis, etc. Applications in areas of energy conversion, storage, magnetics, optoelectronics, quantum computation, nanoelectromechanical systems, and semiconductor electronics.
G04
Thin Films and Epitaxial Growth
Physical, chemical, and technological aspects of epitaxial growth.
G05
Organic and Biological Crystallization
Current advancements in biomineralization, macromolecular crystallization, protein crystal growth, and bio-inspired materials synthesis. Biomimetics, learning from nature to grow organic and biomacromolecular crystals.
G06
Bulk Crystal Growth
Bulk crystal growth including crystallization mechanisms and morphological instabilities. Development of new methods and approaches for bulk growth. Novel materials and structures.
G07
Defect Formation
Studies of the mechanisms of defect formation in crystals. Investigations of crystal chemistry, crystalline structure, and physical properties.
G08
Advanced Growth Technologies
Growth of advanced multidisciplinary inorganic materials. Investigations of crystal chemistry, crystalline structure, and physical properties.
G09
In situ Observation and Characterization
Recent advancements in in-situ monitoring methods. Microscopy, spectroscopy, topography, scattering, and other characterization techniques.
G10
External Fields, Microgravity
Nucleation and crystal growth under external fields, including reduced gravity, magnetic, and electric fields.
G11
Industrial Crystallization
Innovations made over the last decade in the area of industrial crystallization. Equipment for industrial crystal growth. Crystal preparation such as cutting, polishing, and structuring. Food, cosmetics, and pharmaceutical crystallisation.
■ Topical Session (Materials & Applications)
T01
III-V Semiconductors
Bulk and epitaxial growth of III-V semiconductors.
T02
Group IV Semiconductors
The latest progress in growth of group IV semicondutors such as Si, Ge, and SiGe.
T03
2D Materials
Growth and application of graphene and other two dimensional materials.
T04
II-VI and Oxide Materials
Growth of HgCdTe, ZnSe, ZnO, and CdTe, as well as other II-VI and oxide materials.
T05
Materials for Spintronics
Growth of spintronic materials including diluted magnetic semiconductors, oxides, and metals.
T06
Materials for Optical Devices
Crystal growth and characterization of materials for optical devices such as lasers, nonlinear optics, solar cells, and magnetooptic materials.
T07
Materials for Electron Devices
Preparation and characterization of advanced materials for electron devices.
T08
Materials for Organic Devices and Bio Applications
Functional materials and devices for organic electronics and bio applications. Thin film growth, self-assembly, and self organization.
T09
Nitride Semiconductors
Recent progress and outlining future directions in the field of bulk substrates and thin film growth of III-Nitrides.
T10
Silicon Carbide
Scientific and technological advances in the field of SiC and related materials such as diamond.
■ Joint Session
J01
Growth Simulation and Practice
Current status and future prospects of potential and limitation on simulation for prediction of crystal growth.
If you would prefer yet another file format to submit your abstract,
please contact the Workshop Organizers in advance at
j_hasegawa109@west.jtb.jp